Valley-polarized exciton currents in a van der waals heterostructure

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ABSTRACT Valleytronics is an appealing alternative to conventional charge-based electronics that aims at encoding data in the valley degree of freedom, that is, the information as to which


extreme of the conduction or valence band carriers are occupying. The ability to create and control valley currents in solid-state devices could therefore enable new paradigms for


information processing. Transition metal dichalcogenides (TMDCs) are a promising platform for valleytronics due to the presence of two inequivalent valleys with spin–valley locking1 and a


direct bandgap2,3, which allows optical initialization and readout of the valley state4,5. Recent progress on the control of interlayer excitons in these materials6,7,8 could offer an


effective way to realize optoelectronic devices based on the valley degree of freedom. Here, we show the generation and transport over mesoscopic distances of valley-polarized excitons in a


device based on a type-II TMDC heterostructure. Engineering of the interlayer coupling results in enhanced diffusion of valley-polarized excitons, which can be controlled and switched


electrically. Furthermore, using electrostatic traps, we can increase the exciton concentration by an order of magnitude, reaching densities in the order of 1012 cm−2, opening the route to


achieving a coherent quantum state of valley-polarized excitons via Bose–Einstein condensation. Access through your institution Buy or subscribe This is a preview of subscription content,


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institutional subscriptions * Read our FAQs * Contact customer support SIMILAR CONTENT BEING VIEWED BY OTHERS MAGNETIC-GATEABLE VALLEY EXCITON EMISSION Article Open access 07 July 2020


CONCEPTS OF THE HALF-VALLEY-METAL AND QUANTUM ANOMALOUS VALLEY HALL EFFECT Article Open access 21 August 2020 ROOM-TEMPERATURE VALLEYTRONIC TRANSISTOR Article 20 July 2020 DATA AVAILABILITY


The data that support the findings of this study are available from the corresponding author on reasonable request. REFERENCES * Xiao, D., Liu, G.-B., Feng, W., Xu, X. & Yao, W. Coupled


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671–675 (2012). Article  CAS  Google Scholar  Download references ACKNOWLEDGEMENTS We are grateful to J.F. Gonzalez Marin for useful discussions. We acknowledge the help of Z. Benes (EPFL


Center of MicroNanoTechnology (CMI)) with electron-beam lithography. D.U., A.C., A.A. and A.K. acknowledge support by the Swiss National Science Foundation (grant no. 153298), H2020 European


Research Council (ERC, grant no. 682332) and Marie Curie-Sklodowska-Curie Actions (COFUND grant no. 665667). A.K. acknowledges funding from the European Union’s Horizon H2020 Future and


Emerging Technologies under grant no. 696656 (Graphene Flagship). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan and JSPS KAKENHI


grants nos. JP15K21722 and JP25106006. AUTHOR INFORMATION Author notes * These authors contributed equally: Dmitrii Unuchek, Alberto Ciarrocchi. AUTHORS AND AFFILIATIONS * Electrical


Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland Dmitrii Unuchek, Alberto Ciarrocchi, Ahmet Avsar, Zhe Sun & Andras Kis * Institute of


Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland Dmitrii Unuchek, Alberto Ciarrocchi, Ahmet Avsar, Zhe Sun & Andras Kis *


National Institute for Materials Science, Tsukuba, Japan Kenji Watanabe & Takashi Taniguchi Authors * Dmitrii Unuchek View author publications You can also search for this author


inPubMed Google Scholar * Alberto Ciarrocchi View author publications You can also search for this author inPubMed Google Scholar * Ahmet Avsar View author publications You can also search


for this author inPubMed Google Scholar * Zhe Sun View author publications You can also search for this author inPubMed Google Scholar * Kenji Watanabe View author publications You can also


search for this author inPubMed Google Scholar * Takashi Taniguchi View author publications You can also search for this author inPubMed Google Scholar * Andras Kis View author publications


You can also search for this author inPubMed Google Scholar CONTRIBUTIONS A.K. initiated and supervised the project. A.C. fabricated the devices. D.U. performed optical measurements with


assistance from A.C. A.C. and D.U. analysed the data. Z.S., A.C. and D.U. performed SHG measurements. K.W. and T.T. grew the hBN crystals. A.C., D.U., A.A. and A.K. wrote the manuscript,


with input from all authors. CORRESPONDING AUTHOR Correspondence to Andras Kis. ETHICS DECLARATIONS COMPETING INTERESTS The authors declare no competing interests. ADDITIONAL INFORMATION


PEER REVIEW INFORMATION _Nature Nanotechnology_ thanks Min-Kyu Joo and the other, anonymous, reviewer(s) for their contribution to the peer review of this work. PUBLISHER’S NOTE Springer


Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Supplementary Figs. 1–11 and


refs. 1–5. RIGHTS AND PERMISSIONS Reprints and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Unuchek, D., Ciarrocchi, A., Avsar, A. _et al._ Valley-polarized exciton currents in a van


der Waals heterostructure. _Nat. Nanotechnol._ 14, 1104–1109 (2019). https://doi.org/10.1038/s41565-019-0559-y Download citation * Received: 03 June 2019 * Accepted: 16 September 2019 *


Published: 21 October 2019 * Issue Date: December 2019 * DOI: https://doi.org/10.1038/s41565-019-0559-y SHARE THIS ARTICLE Anyone you share the following link with will be able to read this


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