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ABSTRACT Valleytronics is an appealing alternative to conventional charge-based electronics that aims at encoding data in the valley degree of freedom, that is, the information as to which
extreme of the conduction or valence band carriers are occupying. The ability to create and control valley currents in solid-state devices could therefore enable new paradigms for
information processing. Transition metal dichalcogenides (TMDCs) are a promising platform for valleytronics due to the presence of two inequivalent valleys with spin–valley locking1 and a
direct bandgap2,3, which allows optical initialization and readout of the valley state4,5. Recent progress on the control of interlayer excitons in these materials6,7,8 could offer an
effective way to realize optoelectronic devices based on the valley degree of freedom. Here, we show the generation and transport over mesoscopic distances of valley-polarized excitons in a
device based on a type-II TMDC heterostructure. Engineering of the interlayer coupling results in enhanced diffusion of valley-polarized excitons, which can be controlled and switched
electrically. Furthermore, using electrostatic traps, we can increase the exciton concentration by an order of magnitude, reaching densities in the order of 1012 cm−2, opening the route to
achieving a coherent quantum state of valley-polarized excitons via Bose–Einstein condensation. Access through your institution Buy or subscribe This is a preview of subscription content,
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institutional subscriptions * Read our FAQs * Contact customer support SIMILAR CONTENT BEING VIEWED BY OTHERS MAGNETIC-GATEABLE VALLEY EXCITON EMISSION Article Open access 07 July 2020
CONCEPTS OF THE HALF-VALLEY-METAL AND QUANTUM ANOMALOUS VALLEY HALL EFFECT Article Open access 21 August 2020 ROOM-TEMPERATURE VALLEYTRONIC TRANSISTOR Article 20 July 2020 DATA AVAILABILITY
The data that support the findings of this study are available from the corresponding author on reasonable request. REFERENCES * Xiao, D., Liu, G.-B., Feng, W., Xu, X. & Yao, W. Coupled
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671–675 (2012). Article CAS Google Scholar Download references ACKNOWLEDGEMENTS We are grateful to J.F. Gonzalez Marin for useful discussions. We acknowledge the help of Z. Benes (EPFL
Center of MicroNanoTechnology (CMI)) with electron-beam lithography. D.U., A.C., A.A. and A.K. acknowledge support by the Swiss National Science Foundation (grant no. 153298), H2020 European
Research Council (ERC, grant no. 682332) and Marie Curie-Sklodowska-Curie Actions (COFUND grant no. 665667). A.K. acknowledges funding from the European Union’s Horizon H2020 Future and
Emerging Technologies under grant no. 696656 (Graphene Flagship). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan and JSPS KAKENHI
grants nos. JP15K21722 and JP25106006. AUTHOR INFORMATION Author notes * These authors contributed equally: Dmitrii Unuchek, Alberto Ciarrocchi. AUTHORS AND AFFILIATIONS * Electrical
Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland Dmitrii Unuchek, Alberto Ciarrocchi, Ahmet Avsar, Zhe Sun & Andras Kis * Institute of
Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland Dmitrii Unuchek, Alberto Ciarrocchi, Ahmet Avsar, Zhe Sun & Andras Kis *
National Institute for Materials Science, Tsukuba, Japan Kenji Watanabe & Takashi Taniguchi Authors * Dmitrii Unuchek View author publications You can also search for this author
inPubMed Google Scholar * Alberto Ciarrocchi View author publications You can also search for this author inPubMed Google Scholar * Ahmet Avsar View author publications You can also search
for this author inPubMed Google Scholar * Zhe Sun View author publications You can also search for this author inPubMed Google Scholar * Kenji Watanabe View author publications You can also
search for this author inPubMed Google Scholar * Takashi Taniguchi View author publications You can also search for this author inPubMed Google Scholar * Andras Kis View author publications
You can also search for this author inPubMed Google Scholar CONTRIBUTIONS A.K. initiated and supervised the project. A.C. fabricated the devices. D.U. performed optical measurements with
assistance from A.C. A.C. and D.U. analysed the data. Z.S., A.C. and D.U. performed SHG measurements. K.W. and T.T. grew the hBN crystals. A.C., D.U., A.A. and A.K. wrote the manuscript,
with input from all authors. CORRESPONDING AUTHOR Correspondence to Andras Kis. ETHICS DECLARATIONS COMPETING INTERESTS The authors declare no competing interests. ADDITIONAL INFORMATION
PEER REVIEW INFORMATION _Nature Nanotechnology_ thanks Min-Kyu Joo and the other, anonymous, reviewer(s) for their contribution to the peer review of this work. PUBLISHER’S NOTE Springer
Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Supplementary Figs. 1–11 and
refs. 1–5. RIGHTS AND PERMISSIONS Reprints and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Unuchek, D., Ciarrocchi, A., Avsar, A. _et al._ Valley-polarized exciton currents in a van
der Waals heterostructure. _Nat. Nanotechnol._ 14, 1104–1109 (2019). https://doi.org/10.1038/s41565-019-0559-y Download citation * Received: 03 June 2019 * Accepted: 16 September 2019 *
Published: 21 October 2019 * Issue Date: December 2019 * DOI: https://doi.org/10.1038/s41565-019-0559-y SHARE THIS ARTICLE Anyone you share the following link with will be able to read this
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