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A conventional material used in magnetic tunnel junctions with in-plane magnetization can also be magnetized perpendicularly, offering new possibilities for high-performance memory and logic
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Purchase on SpringerLink * Instant access to full article PDF Buy now Prices may be subject to local taxes which are calculated during checkout ADDITIONAL ACCESS OPTIONS: * Log in * Learn
about institutional subscriptions * Read our FAQs * Contact customer support REFERENCES * Ikeda, S. et al. _Nature Mater._ 9, 721–724 (2010). Article CAS Google Scholar * Slonczewski, J.
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(2008). Article CAS Google Scholar Download references AUTHOR INFORMATION AUTHORS AND AFFILIATIONS * Andrew D. Kent is in the Department of Physics, New York University, 4 Washington
Place, New York, New York 10003. [email protected], Andrew D. Kent Authors * Andrew D. Kent View author publications You can also search for this author inPubMed Google Scholar ETHICS
DECLARATIONS COMPETING INTERESTS The author declares competing financial interests: Spin Transfer Technologies, LLC is developing orthogonal spin-transfer MRAM under a license from New York
University (NYU). The author may receive a portion of NYU's license income. RIGHTS AND PERMISSIONS Reprints and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Kent, A. Perpendicular
all the way. _Nature Mater_ 9, 699–700 (2010). https://doi.org/10.1038/nmat2844 Download citation * Issue Date: September 2010 * DOI: https://doi.org/10.1038/nmat2844 SHARE THIS ARTICLE
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