Elastically relaxed free-standing strained-silicon nanomembranes

ABSTRACT Strain plays a critical role in the properties of materials. In silicon and silicon–germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In

materials integration, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain by fabricating membranes in

which the final strain state is controlled by elastic strain sharing, that is, without the formation of defects. We grow Si/SiGe layers on a substrate from which they can be released,

forming nanomembranes. X-ray-diffraction measurements confirm a final strain predicted by elasticity theory. The effectiveness of elastic strain to alter electronic properties is

demonstrated by low-temperature longitudinal Hall-effect measurements on a strained-silicon quantum well before and after release. Elastic strain sharing and film transfer offer an

intriguing path towards complex, multiple-layer structures in which each layer’s properties are controlled elastically, without the introduction of undesirable defects. Access through your

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BEING VIEWED BY OTHERS SUPPRESSED THERMAL TRANSPORT IN SILICON NANORIBBONS BY INHOMOGENEOUS STRAIN Article 15 May 2024 STRAIN-INDUCED ROOM-TEMPERATURE FERROELECTRICITY IN SRTIO3 MEMBRANES

Article Open access 19 June 2020 FULL INTEGRATION OF HIGHLY STRETCHABLE INORGANIC TRANSISTORS AND CIRCUITS WITHIN MOLECULAR-TAILORED ELASTIC SUBSTRATES ON A LARGE SCALE Article Open access

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ACKNOWLEDGEMENTS This research was supported by DOE, NSF-MRSEC, AFOSR, NSF-ITR, ARDA, ARO and NSA. AUTHOR INFORMATION AUTHORS AND AFFILIATIONS * University of Wisconsin–Madison, Madison,

Wisconsin, 53711, USA Michelle M. Roberts, Levente J. Klein, Donald E. Savage, Keith A. Slinker, Mark Friesen, Mark A. Eriksson & Max G. Lagally * Soitec USA, 2 Centennial Drive,

Peabody, Massachusetts, 01960, USA George Celler Authors * Michelle M. Roberts View author publications You can also search for this author inPubMed Google Scholar * Levente J. Klein View

author publications You can also search for this author inPubMed Google Scholar * Donald E. Savage View author publications You can also search for this author inPubMed Google Scholar *

Keith A. Slinker View author publications You can also search for this author inPubMed Google Scholar * Mark Friesen View author publications You can also search for this author inPubMed 

Google Scholar * George Celler View author publications You can also search for this author inPubMed Google Scholar * Mark A. Eriksson View author publications You can also search for this

author inPubMed Google Scholar * Max G. Lagally View author publications You can also search for this author inPubMed Google Scholar CORRESPONDING AUTHOR Correspondence to Mark A. Eriksson.

ETHICS DECLARATIONS COMPETING INTERESTS Three of the authors, M. M. Roberts, D. E. Savage and M. G. Lagally, are listed as inventors on U.S. Patent application #P04286US, "Fabrication

of Silicon-Germanium Heterojunction Structures", filed December 16, 2004. G. Celler is employed by Soitec, a maker of silicon-on-insulator. RIGHTS AND PERMISSIONS Reprints and

permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Roberts, M., Klein, L., Savage, D. _et al._ Elastically relaxed free-standing strained-silicon nanomembranes. _Nature Mater_ 5, 388–393

(2006). https://doi.org/10.1038/nmat1606 Download citation * Received: 08 August 2005 * Accepted: 25 January 2006 * Published: 09 April 2006 * Issue Date: 01 May 2006 * DOI:

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