Large positive magnetoresistive effect in silicon induced by the space-charge effect

ABSTRACT Recent discoveries of large magnetoresistance in non-magnetic semiconductors1,2,3,4,5,6,7,8 have gained much attention because the size of the effect is comparable to, or even

larger than, that of magnetoresistance in magnetic systems9,10,11,12,13,14. Conventional magnetoresistance in doped semiconductors is straightforwardly explained as the effect of the Lorentz

force on the carrier motion15, but the reported unusually large effects imply that the underlying mechanisms have not yet been fully explored. Here we report that a simple device, based on

a lightly doped silicon substrate between two metallic contacts, shows a large positive magnetoresistance of more than 1,000 per cent at room temperature (300 K) and 10,000 per cent at 25 K,

for magnetic fields between 0 and 3 T. A high electric field is applied to the device, so that conduction is space-charge limited16,17,18. For substrates with a charge carrier density below

∼1013 cm-3, the magnetoresistance exhibits a linear dependence on the magnetic field between 3 and 9 T. We propose that the observed large magnetoresistance can be explained by

quasi-neutrality breaking of the space-charge effect, where insufficient charge is present to compensate the electrons injected into the device. This introduces an electric field

inhomogeneity, analogous to the situation in other semiconductors in which a large, non-saturating magnetoresistance was observed1,2,3,4,5,19. In this regime, the motions of electrons become

correlated, and thus become dependent on magnetic field. Although large positive magnetoresistance at room temperature has been achieved in metal–semiconductor hybrid devices6,7,8, we have

now realized it in a simpler structure and in a way different from other known magnetoresistive effects9,10,11,12,13,14,20. It could be used to develop new magnetic devices from silicon,

which may further advance silicon technology. Access through your institution Buy or subscribe This is a preview of subscription content, access via your institution ACCESS OPTIONS Access

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Article  CAS  Google Scholar  Download references ACKNOWLEDGEMENTS We appreciate discussions with T. Shinjo, H. Akinaga, H. Sakakima, Y. Iye, J. Ohe, S. Takahashi and T. Susaki. This work

was partly supported by KAKENHI, ICR Grants for Young Scientists, the Asahi Glass Foundation and the Sumitomo Foundation. M.P.D. acknowledges support from JSPS Research Fellowships for Young

Scientists. AUTHOR INFORMATION AUTHORS AND AFFILIATIONS * Institute for Chemical Research,, Michael P. Delmo, Shinya Kasai, Teruo Ono & Kensuke Kobayashi * Institute for Integrated

Cell-Material Sciences, Kyoto University, Uji 611-0011, Japan , Shinpei Yamamoto Authors * Michael P. Delmo View author publications You can also search for this author inPubMed Google

Scholar * Shinpei Yamamoto View author publications You can also search for this author inPubMed Google Scholar * Shinya Kasai View author publications You can also search for this author

inPubMed Google Scholar * Teruo Ono View author publications You can also search for this author inPubMed Google Scholar * Kensuke Kobayashi View author publications You can also search for

this author inPubMed Google Scholar CORRESPONDING AUTHOR Correspondence to Kensuke Kobayashi. SUPPLEMENTARY INFORMATION SUPPLEMENTARY FIGURES This file contains Supplementary Figures S1-S4

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and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Delmo, M., Yamamoto, S., Kasai, S. _et al._ Large positive magnetoresistive effect in silicon induced by the space-charge effect.

_Nature_ 457, 1112–1115 (2009). https://doi.org/10.1038/nature07711 Download citation * Received: 03 June 2008 * Accepted: 08 December 2008 * Issue Date: 26 February 2009 * DOI:

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