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ABSTRACT Adding optical functionality to a silicon microelectronic chip is one of the most challenging problems of materials research. Silicon is an indirect-bandgap semiconductor and so is
an inefficient emitter of light. For this reason, integration of optically functional elements with silicon microelectronic circuitry has largely been achieved through the use of
direct-bandgap compound semiconductors. For optoelectronic applications, the key device is the light source—a laser. Compound semiconductor lasers exploit low-dimensional electronic systems,
such as quantum wells and quantum dots, as the active optical amplifying medium. Here we demonstrate that light amplification is possible using silicon itself, in the form of quantum dots
dispersed in a silicon dioxide matrix. Net optical gain is seen in both waveguide and transmission configurations, with the material gain being of the same order as that of direct-bandgap
quantum dots. We explain the observations using a model based on population inversion of radiative states associated with the Si/SiO2 interface. These findings open a route to the
fabrication of a silicon laser. Access through your institution Buy or subscribe This is a preview of subscription content, access via your institution ACCESS OPTIONS Access through your
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FAQs * Contact customer support SIMILAR CONTENT BEING VIEWED BY OTHERS ALL-SILICON QUANTUM LIGHT SOURCE BY EMBEDDING AN ATOMIC EMISSIVE CENTER IN A NANOPHOTONIC CAVITY Article Open access
07 June 2023 HIGHLY EFFICIENT NONLINEAR OPTICAL EMISSION FROM A SUBWAVELENGTH CRYSTALLINE SILICON CUBOID MEDIATED BY SUPERCAVITY MODE Article Open access 18 May 2022 PROGRAMMABLE QUANTUM
EMITTER FORMATION IN SILICON Article Open access 27 May 2024 REFERENCES * Canham, L. T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. _Appl.
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1978). Article ADS CAS Google Scholar Download references ACKNOWLEDGEMENTS This work has been supported by the National Institute for the Physics of the Matter (INFM) through the LUNA
project and the advanced research project RAMSES. AUTHOR INFORMATION AUTHORS AND AFFILIATIONS * INFM & Dipartimento di Fisica Università di Trento, Via Sommarive 14, Povo, 38050, Italy
L. Pavesi, L. Dal Negro & C. Mazzoleni * INFM & Dipartimento di Fisica e Astronomia, Università di Catania, Corso Italia 57 , Catania, 95129, Italy G. Franzò & F. Priolo Authors
* L. Pavesi View author publications You can also search for this author inPubMed Google Scholar * L. Dal Negro View author publications You can also search for this author inPubMed Google
Scholar * C. Mazzoleni View author publications You can also search for this author inPubMed Google Scholar * G. Franzò View author publications You can also search for this author inPubMed
Google Scholar * F. Priolo View author publications You can also search for this author inPubMed Google Scholar CORRESPONDING AUTHOR Correspondence to L. Pavesi. SUPPLEMENTARY INFORMATION
SUPPLEMENTARY FIGURES 1–3. RIGHTS AND PERMISSIONS Reprints and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Pavesi, L., Dal Negro, L., Mazzoleni, C. _et al._ Optical gain in silicon
nanocrystals. _Nature_ 408, 440–444 (2000). https://doi.org/10.1038/35044012 Download citation * Received: 08 June 2000 * Accepted: 24 October 2000 * Issue Date: 23 November 2000 * DOI:
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